Infineon Technologies - BTS115A

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BTS115A by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS115A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
Datasheet BTS115A Datasheet
In Stock456
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15.5 A
Maximum Pulsed Drain Current (IDM): 62 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .12 ohm
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 15.5 A
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