Infineon Technologies - BTS130E3045

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BTS130E3045 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS130E3045
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G2; Terminal Position: SINGLE;
Datasheet BTS130E3045 Datasheet
In Stock695
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 27 A
Maximum Pulsed Drain Current (IDM): 108 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 27 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .05 ohm
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