Infineon Technologies - BTS282ZE-3230

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BTS282ZE-3230 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS282ZE-3230
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BTS282ZE-3230 Datasheet
In Stock422
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 7
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0095 ohm
Avalanche Energy Rating (EAS): 2000 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 49 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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Pricing (USD)

Qty. Unit Price Ext. Price
422 $2.420 $1,021.240

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