Infineon Technologies - BTS7904B

BTS7904B by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS7904B
Description N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Minimum DS Breakdown Voltage: 55 V; Maximum Drain Current (Abs) (ID): 40 A;
Datasheet BTS7904B Datasheet
In Stock321
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 160 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 5
Maximum Power Dissipation (Abs): 96 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0202 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 200 mJ
JEDEC-95 Code: TO-263
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 40 A
Peak Reflow Temperature (C): 245
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