Infineon Technologies - BTS7904BATMA1

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BTS7904BATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS7904BATMA1
Description N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0202 ohm; Transistor Element Material: SILICON; Terminal Position: SINGLE;
Datasheet BTS7904BATMA1 Datasheet
In Stock729
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 200 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 40 A
JEDEC-95 Code: TO-263
Maximum Pulsed Drain Current (IDM): 160 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0202 ohm
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