Infineon Technologies - BUZ103S-4

BUZ103S-4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUZ103S-4
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.6 W; Minimum DS Breakdown Voltage: 55 V; No. of Elements: 4;
Datasheet BUZ103S-4 Datasheet
In Stock247
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5.3 A
Maximum Pulsed Drain Current (IDM): 21.2 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 28
Maximum Power Dissipation (Abs): 9.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G28
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .045 ohm
Avalanche Energy Rating (EAS): 140 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 5.3 A
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