Infineon Technologies - BUZ210

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BUZ210 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUZ210
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 10.5 A; Case Connection: DRAIN;
Datasheet BUZ210 Datasheet
In Stock51
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10.5 A
Maximum Pulsed Drain Current (IDM): 42 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .6 ohm
JEDEC-95 Code: TO-204AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 10.5 A
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Pricing (USD)

Qty. Unit Price Ext. Price
51 $10.500 $535.500

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