Infineon Technologies - BUZ30ASMDG

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BUZ30ASMDG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUZ30ASMDG
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
Datasheet BUZ30ASMDG Datasheet
In Stock172
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 21 A
Maximum Pulsed Drain Current (IDM): 84 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .13 ohm
Avalanche Energy Rating (EAS): 450 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 21 A
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