BXY44P-FPP by Infineon Technologies | Diodes

Image shown is a representation only.

Manufacturer	Infineon Technologies
Manufacturer's Part Number	BXY44P-FPP
Description	PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;
Datasheet	BXY44P-FPP Datasheet
In Stock	660

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Diode Resistive Test Frequency:	100 MHz
Config:	COMMON CATHODE, 2 ELEMENTS
Diode Type:	PIN DIODE
Diode Resistive Test Current:	1 mA
Sub-Category:	PIN Diodes
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Terminal Position:	DUAL
Maximum Diode Capacitance:	.75 pF
Package Style (Meter):	FLATPACK
Technology:	POSITIVE-INTRINSIC-NEGATIVE
JESD-30 Code:	S-CDFP-F4
Minimum Breakdown Voltage:	200 V
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	FLAT
Maximum Operating Temperature:	175 Cel
Maximum Diode Forward Resistance:	1200 ohm
Nominal Minority Carrier Lifetime:	.8 us
Reverse Test Voltage:	50 V
JESD-609 Code:	e3
Nominal Diode Capacitance:	.5 pF
Diode Element Material:	SILICON
Qualification:	Not Qualified
Maximum Power Dissipation:	.5 W
Application:	ATTENUATOR; SWITCHING

Pricing (USD)

Qty.	Unit Price	Ext. Price
660	-	-

BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.

Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.