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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | CF750 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR; Surface Mount: YES; Minimum Power Gain (Gp): 10 dB; Maximum Drain Current (Abs) (ID): .08 A; Operating Mode: DUAL GATE, DEPLETION MODE; |
| Datasheet | CF750 Datasheet |
| In Stock | 148 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .08 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, DEPLETION MODE |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .3 W |
| Minimum Power Gain (Gp): | 10 dB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 8 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .08 A |
