Infineon Technologies - CF750E6327

CF750E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number CF750E6327
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 8 V; Highest Frequency Band: S BAND;
Datasheet CF750E6327 Datasheet
In Stock629
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .08 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 4
Minimum DS Breakdown Voltage: 8 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DUAL GATE, DEPLETION MODE
Highest Frequency Band: S BAND
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Pricing (USD)

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