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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | CF750E6327 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 8 V; Highest Frequency Band: S BAND; |
Datasheet | CF750E6327 Datasheet |
In Stock | 629 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | GALLIUM ARSENIDE |
Field Effect Transistor Technology: | JUNCTION |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .08 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 8 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DUAL GATE, DEPLETION MODE |
Highest Frequency Band: | S BAND |