Infineon Technologies - CFY25-P

CFY25-P by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number CFY25-P
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 8.5 dB; Transistor Element Material: GALLIUM ARSENIDE; Minimum DS Breakdown Voltage: 5 V;
Datasheet CFY25-P Datasheet
In Stock300
NAME DESCRIPTION
Minimum Power Gain (Gp): 8.5 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .08 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 5 V
Qualification: Not Qualified
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-CRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Additional Features: LOW NOISE
Highest Frequency Band: X BAND
Case Connection: SOURCE
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Pricing (USD)

Qty. Unit Price Ext. Price
300 - -

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