Infineon Technologies - CFY67-06P

CFY67-06P by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number CFY67-06P
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11.5 dB; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: K BAND;
Datasheet CFY67-06P Datasheet
In Stock109
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .06 A
Sub-Category: FET RF Small Signal
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-CRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: K BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: .2 W
Minimum Power Gain (Gp): 11.5 dB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 3.5 V
Qualification: Not Qualified
Additional Features: LOW NOISE
Reference Standard: ESA/SCC 5613/004
Maximum Drain Current (Abs) (ID): .06 A
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