Infineon Technologies - CLX30-10P

  1. Home
  2. Infineon Technologies - CLX30-10P
CLX30-10P by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number CLX30-10P
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; No. of Elements: 1; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
Datasheet CLX30-10P Datasheet
In Stock649
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .84 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Maximum Operating Temperature: 175 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 5.4 W
Minimum Power Gain (Gp): 17 dB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 11 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .84 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
649 - -

Popular Products

Category Top Products

934031480135 by NXP Semiconductors

934031480135

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF991 by Philips Components

BF991

Philips Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
934056333115 by NXP Semiconductors

934056333115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .03 pF; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
934060901115 by NXP Semiconductors

934060901115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: FLAT; No. of Terminals: 6;
BLF184XRS by Ampleon Netherlands B V

BLF184XRS

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 22.8 dB; Case Connection: SOURCE; Terminal Position: DUAL;
BF982 by NXP Semiconductors

BF982

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 20 V; Package Body Material: PLASTIC/EPOXY;
BLP8G20S-80P by NXP Semiconductors

BLP8G20S-80P

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
BF511-T by NXP Semiconductors

BF511-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF245C by Fairchild Semiconductor

BF245C

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; No. of Terminals: 3; Terminal Finish: TIN SILVER COPPER;
2N4223 by Texas Instruments

2N4223

Texas Instruments

2N4223 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, 10 dB Power Gain, and 0.02A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DEPLETION MODE operation. Package: METAL, Shape: ROUND, Technology: JUNCTION.
BF1100R by NXP Semiconductors

BF1100R

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: MATTE TIN; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PDSO-G4;
BF1100,215 by NXP Semiconductors

BF1100,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 14 V;
BF545B-TAPE-7 by NXP Semiconductors

BF545B-TAPE-7

NXP Semiconductors

BF545B-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
934055157235 by NXP Semiconductors

934055157235

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .01 A; Minimum DS Breakdown Voltage: 3 V; Terminal Position: DUAL;
BF256C by NXP Semiconductors

BF256C

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; JESD-30 Code: O-PBCY-T3;
NE3210S01-T1B by California Eastern Laboratories

NE3210S01-T1B

California Eastern Laboratories

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; JESD-30 Code: O-PRDB-G4; Package Body Material: PLASTIC/EPOXY;
BLF644P by NXP Semiconductors

BLF644P

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
JAN2N3822 by New England Semiconductor

JAN2N3822

New England Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; No. of Elements: 1;
BF256ARL1 by Onsemi

BF256ARL1

Onsemi

BF256ARL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high-frequency signal amplification in a THROUGH-HOLE package.
934055611215 by NXP Semiconductors

934055611215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G4;