Infineon Technologies - DDB6U100N16RRBOSA1

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DDB6U100N16RRBOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DDB6U100N16RRBOSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet DDB6U100N16RRBOSA1 Datasheet
In Stock5
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 17
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X17
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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