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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | DDB6U180N16RR |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; |
| Datasheet | DDB6U180N16RR Datasheet |
| In Stock | 200 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 140 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 620 ns |
| No. of Terminals: | 26 |
| Maximum Power Dissipation (Abs): | 515 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 210 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X26 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Reference Standard: | UL APPROVED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2.2 V |
