DDB6U180N16RRB37BOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DDB6U180N16RRB37BOSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Reference Standard: UL RECOGNIZED; Maximum Collector-Emitter Voltage: 1200 V; Minimum Operating Temperature: -40 Cel;
Datasheet	DDB6U180N16RRB37BOSA1 Datasheet
In Stock	256

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	620 ns
No. of Terminals:	29
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	210 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X29
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Reference Standard:	UL RECOGNIZED
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
256	$100.690	$25,776.640

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