DDB6U75N16W1RBOMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DDB6U75N16W1RBOMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 69 A; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	DDB6U75N16W1RBOMA1 Datasheet
In Stock	753

NAME	DESCRIPTION
Other Names:	DDB6U75N16W1R-ND 448-DDB6U75N16W1RBOMA1 SP000546200 DDB6U75N16W1R DDB6U75N16W1RBOMA1-ND
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	69 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	630 ns
No. of Terminals:	27
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	137 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X27
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
753	$27.080	$20,391.240

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