DF100R07W1H5FP_B53 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DF100R07W1H5FP_B53
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet	DF100R07W1H5FP_B53 Datasheet
In Stock	124

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	40 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	4.75 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	40 ns
No. of Terminals:	26
Maximum Collector-Emitter Voltage:	650 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	17 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X26
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.55 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
124	-	-

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