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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | DF200R07W2H3_B77 |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Minimum Operating Temperature: -40 Cel; Package Shape: RECTANGULAR; |
| Datasheet | DF200R07W2H3_B77 Datasheet |
| In Stock | 50 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 40 A |
| Configuration: | SERIES CONNECTED, CENTER TAP, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.45 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 162 ns |
| No. of Terminals: | 30 |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 22 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X30 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 650 V |
| Additional Features: | UL RECOGNIZED |
| Maximum Gate-Emitter Voltage: | 20 V |
| Reference Standard: | IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
| Maximum VCEsat: | 2 V |
