Infineon Technologies - DF200R12W1H3F_B11

DF200R12W1H3F_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF200R12W1H3F_B11
Description N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Terminals: 18; Terminal Position: BOTTOM; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet DF200R12W1H3F_B11 Datasheet
In Stock500
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.45 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 475 ns
No. of Terminals: 18
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: BOTTOM
Nominal Turn On Time (ton): 27 ns
Package Style (Meter): PRESS-FIT
JESD-30 Code: R-XBPF-P18
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Additional Features: LOW SWITCHING LOSSES
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.45 V
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Pricing (USD)

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