DF200R12W1H3F_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DF200R12W1H3F_B11
Description	N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Terminals: 18; Terminal Position: BOTTOM; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet	DF200R12W1H3F_B11 Datasheet
In Stock	500

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.45 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	475 ns
No. of Terminals:	18
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	BOTTOM
Nominal Turn On Time (ton):	27 ns
Package Style (Meter):	PRESS-FIT
JESD-30 Code:	R-XBPF-P18
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Additional Features:	LOW SWITCHING LOSSES
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	1.45 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
500	-	-

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