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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | DF200R12W1H3F_B11 |
Description | N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; No. of Terminals: 18; Terminal Position: BOTTOM; Maximum Collector-Emitter Voltage: 1200 V; |
Datasheet | DF200R12W1H3F_B11 Datasheet |
In Stock | 500 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON |
Maximum Gate-Emitter Threshold Voltage: | 6.45 V |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum Operating Temperature: | -40 Cel |
Nominal Turn Off Time (toff): | 475 ns |
No. of Terminals: | 18 |
Maximum Collector-Emitter Voltage: | 1200 V |
Terminal Position: | BOTTOM |
Nominal Turn On Time (ton): | 27 ns |
Package Style (Meter): | PRESS-FIT |
JESD-30 Code: | R-XBPF-P18 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | PIN/PEG |
Additional Features: | LOW SWITCHING LOSSES |
Maximum Operating Temperature: | 150 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Maximum VCEsat: | 1.45 V |