Infineon Technologies - DF75R12W1H4FB11BOMA1

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DF75R12W1H4FB11BOMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF75R12W1H4FB11BOMA1
Description N-Channel; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 125 Cel;
Datasheet DF75R12W1H4FB11BOMA1 Datasheet
In Stock482
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 500 ns
Maximum Power Dissipation (Abs): 230 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 58 ns
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.65 V
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