Infineon Technologies - DF80R07W1H5FP_B11

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DF80R07W1H5FP_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF80R07W1H5FP_B11
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
Datasheet DF80R07W1H5FP_B11 Datasheet
In Stock950
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 20 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.75 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 124 ns
No. of Terminals: 18
Maximum Collector-Emitter Voltage: 650 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 17 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X18
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.72 V
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