DF900R12IP4DV by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DF900R12IP4DV
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5100 W; Package Shape: RECTANGULAR; Terminal Form: UNSPECIFIED;
Datasheet	DF900R12IP4DV Datasheet
In Stock	489

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	1300 ns
No. of Terminals:	10
Maximum Power Dissipation (Abs):	5100 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	370 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X10
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.05 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
489	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;

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