Infineon Technologies - F3L400R07PE4B26BOSA1

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F3L400R07PE4B26BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number F3L400R07PE4B26BOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 460 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum VCEsat: 1.95 V;
Datasheet F3L400R07PE4B26BOSA1 Datasheet
In Stock340
NAME DESCRIPTION
Maximum Collector Current (IC): 460 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 650 ns
Maximum Power Dissipation (Abs): 1200 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 250 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 1.95 V
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