Infineon Technologies - FB10R06VE3ENG

FB10R06VE3ENG by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FB10R06VE3ENG
Description	N-Channel; Maximum Power Dissipation (Abs): 48.5 W; Maximum Collector Current (IC): 16 A; Maximum Gate-Emitter Voltage: 20 V; Case Connection: ISOLATED; Transistor Element Material: SILICON;
Datasheet	FB10R06VE3ENG Datasheet
In Stock	392

FB10R06VE3ENG Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	16 A
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-Channel
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	280 ns
Maximum Power Dissipation (Abs):	48.5 W
Maximum Collector-Emitter Voltage:	600 V
Nominal Turn On Time (ton):	40 ns
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
392	-	-

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