Infineon Technologies - FD1000R33HE3KBOSA1

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FD1000R33HE3KBOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD1000R33HE3KBOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum VCEsat: 3.1 V; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
Datasheet FD1000R33HE3KBOSA1 Datasheet
In Stock2,306
NAME DESCRIPTION
Other Names: SP000448846
448-FD1000R33HE3KBOSA1
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -50 Cel
Nominal Turn Off Time (toff): 3550 ns
Maximum Power Dissipation (Abs): 9600 W
Maximum Collector-Emitter Voltage: 3300 V
Nominal Turn On Time (ton): 1150 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 3.1 V
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