Infineon Technologies - FD401R17KF6CB2NOSA1

FD401R17KF6CB2NOSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer	Infineon Technologies
Manufacturer's Part Number	FD401R17KF6CB2NOSA1
Description	N-Channel; Maximum Power Dissipation (Abs): 3150 W; Maximum Collector Current (IC): 650 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn Off Time (toff): 1210 ns;
Datasheet	FD401R17KF6CB2NOSA1 Datasheet
In Stock	555

FD401R17KF6CB2NOSA1 Technical Details

NAME	DESCRIPTION
Other Names:	2156-FD401R17KF6CB2NOSA1-448
Maximum Collector Current (IC):	650 A
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-Channel
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	1210 ns
Maximum Power Dissipation (Abs):	3150 W
Maximum Collector-Emitter Voltage:	1700 V
Nominal Turn On Time (ton):	550 ns
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	3.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
555	$773.350	$429,209.250

Popular Products

SMBJ18CA

Pro-an Electronic

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

MMBT2907ALT1G

Onsemi

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.

1N4148

Onsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

2N7002

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;

BAV99

Plessey Semiconductors Discrete Components Div

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SS14

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;

BAV99

Vishay Intertechnology

Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.

BSS138

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;

SMBJ18CA

Lite-on Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LM2931AZ-5.0G

Onsemi

LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.

Category Top Products