Infineon Technologies - FD600R65KF1

FD600R65KF1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FD600R65KF1
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 11400 W; Maximum Collector Current (IC): 1200 A; No. of Elements: 1; Maximum VCEsat: 4.9 V; Maximum Operating Temperature: 125 Cel;
Datasheet	FD600R65KF1 Datasheet
In Stock	183

FD600R65KF1 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	1200 A
Maximum Power Dissipation (Abs):	11400 W
Maximum Collector-Emitter Voltage:	6500 V
No. of Elements:	1
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	4.9 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
183	-	-

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