Infineon Technologies - FD650R17IE4DB2BOSA1

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FD650R17IE4DB2BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD650R17IE4DB2BOSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 930 A; Nominal Turn On Time (ton): 765 ns; Terminal Form: UNSPECIFIED;
Datasheet FD650R17IE4DB2BOSA1 Datasheet
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NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 930 A
Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 1870 ns
No. of Terminals: 10
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 765 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X10
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Reference Standard: UL RECOGNIZED
Case Connection: ISOLATED
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