Infineon Technologies - FD800R17HP4KB2BOSA1

  1. Home
  2. Infineon Technologies - FD800R17HP4KB2BOSA1
FD800R17HP4KB2BOSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FD800R17HP4KB2BOSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Turn On Time (ton): 670 ns; No. of Terminals: 7; Transistor Application: POWER CONTROL;
Datasheet FD800R17HP4KB2BOSA1 Datasheet
In Stock11
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 2000 ns
No. of Terminals: 7
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 670 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Reference Standard: UL APPROVED
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
11 - -

Popular Products

Category Top Products

APT50GP60BG by Microchip Technology

APT50GP60BG

Microchip Technology

APT50GP60BG by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and operates at temperatures up to 150°C.
FF100R12RT4HOSA1 by Infineon Technologies

FF100R12RT4HOSA1

Infineon Technologies

FF100R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and turn off time of 490ns, suitable for POWER CONTROL applications. The transistor operates at up to 175°C and features a built-in diode in its RECTANGULAR package style.
IGW40N120H3FKSA1 by Infineon Technologies

IGW40N120H3FKSA1

Infineon Technologies

IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.
IKW15N120T2FKSA1 by Infineon Technologies

IKW15N120T2FKSA1

Infineon Technologies

IKW15N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 626ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT in PLASTIC/EPOXY material.
IGW50N60TP by Infineon Technologies

IGW50N60TP

Infineon Technologies

IGW50N60TP by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 1.8V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 332ns and ton of 55ns. This transistor operates at temperatures ranging from -40°C to 175°C, making it suitable for various industrial power systems.
IRG4RC10UDTRLP by Infineon Technologies

IRG4RC10UDTRLP

Infineon Technologies

Infineon's IRG4RC10UDTRLP is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 8.5A max collector current. It has a built-in diode, 345ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount configurations.
IRG7PH42UD2PBF by International Rectifier

IRG7PH42UD2PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel;
IRG4PC50SPBF by International Rectifier

IRG4PC50SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V;
IRG4PC40UDPBF by International Rectifier

IRG4PC40UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Nominal Turn On Time (ton): 92 ns;
FP25R12W2T4PBPSA1 by Infineon Technologies

FP25R12W2T4PBPSA1

Infineon Technologies

FP25R12W2T4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 39A. It is used for power control applications due to its complex configuration and nominal turn off time of 685ns. The transistor's package style is flange mount with a rectangular shape and isolated case connection.
IRGR2B60KDTRLPBF by International Rectifier

IRGR2B60KDTRLPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;
APT50GR120JD30 by Microsemi

APT50GR120JD30

Microsemi

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
IGU04N60TAKMA1 by Infineon Technologies

IGU04N60TAKMA1

Infineon Technologies

IGU04N60TAKMA1 by Infineon is an N-CHANNEL IGBT with a 600V max collector-emitter voltage and 9.5A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 268ns and turn-on time of 24ns, it operates in temperatures as low as -40°C.
SGW20N60 by Infineon Technologies

SGW20N60

Infineon Technologies

Infineon Technologies' SGW20N60 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 40A max collector current. Ideal for motor control applications, it has a rise time of 46ns, fall time of 65ns, and turn-off time of 313ns. Package style is flange mount with through-hole terminals.
STGP5H60DF by STMicroelectronics

STGP5H60DF

STMicroelectronics

STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.
STGD20N45LZAG by STMicroelectronics

STGD20N45LZAG

STMicroelectronics

STGD20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 475V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.
IRG4BC30KD-SPBF by Infineon Technologies

IRG4BC30KD-SPBF

Infineon Technologies

IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
IKQ75N120CS6XKSA1 by Infineon Technologies

IKQ75N120CS6XKSA1

Infineon Technologies

IKQ75N120CS6XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 150A, and Pmax of 880W. Ideal for power control applications due to its fast turn-off time (toff) of 428ns and high collector-emitter voltage of 1200V. Package style is flange mount with through-hole terminals.
FP40R12KT3BOSA1 by Infineon Technologies

FP40R12KT3BOSA1

Infineon Technologies

FP40R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 55A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
APT75GP120J by Microsemi

APT75GP120J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; JESD-30 Code: R-PUFM-X4; Package Style (Meter): FLANGE MOUNT;