Infineon Technologies - FF1000R17IE4F

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FF1000R17IE4F by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF1000R17IE4F
Description N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Nominal Turn Off Time (toff): 1890 ns; Minimum Operating Temperature: -40 Cel; Maximum VCEsat: 2.45 V;
Datasheet FF1000R17IE4F Datasheet
In Stock178
NAME DESCRIPTION
Maximum Collector Current (IC): 1390 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1890 ns
Maximum Power Dissipation (Abs): 6250 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 720 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.45 V
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