Infineon Technologies - FF11MR12W1M1B11BOMA1

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FF11MR12W1M1B11BOMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF11MR12W1M1B11BOMA1
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 1200 V;
Datasheet FF11MR12W1M1B11BOMA1 Datasheet
In Stock2
NAME DESCRIPTION
Other Names: 2156-FF11MR12W1M1B11BOMA1
INFINFFF11MR12W1M1B11BOMA1
FF11MR12W1M1_B11
SP001602204
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 200 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 18
Minimum DS Breakdown Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X18
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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