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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | FF11MR12W1M1B11BOMA1 |
Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Case Connection: ISOLATED; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 1200 V; |
Datasheet | FF11MR12W1M1B11BOMA1 Datasheet |
In Stock | 2 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 100 A |
Maximum Pulsed Drain Current (IDM): | 200 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum Operating Temperature: | -40 Cel |
No. of Terminals: | 18 |
Minimum DS Breakdown Voltage: | 1200 V |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X18 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | ISOLATED |
Peak Reflow Temperature (C): | NOT SPECIFIED |