Infineon Technologies - FF225R17ME4P

FF225R17ME4P by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF225R17ME4P
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Nominal Turn On Time (ton): 350 ns; Transistor Element Material: SILICON; No. of Terminals: 11;
Datasheet FF225R17ME4P Datasheet
In Stock541
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1500 ns
No. of Terminals: 11
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 350 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X11
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.3 V
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