Infineon Technologies - FF300R07ME4P_B11

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FF300R07ME4P_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF300R07ME4P_B11
Description N-Channel; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 390 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Transistor Element Material: SILICON; Maximum VCEsat: 1.95 V;
Datasheet FF300R07ME4P_B11 Datasheet
In Stock272
NAME DESCRIPTION
Maximum Collector Current (IC): 390 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 525 ns
Maximum Power Dissipation (Abs): 1100 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 138 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 1.95 V
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