FF300R12KT3PEHOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF300R12KT3PEHOSA1
Description	N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum VCEsat: 2.15 V; Maximum Collector-Emitter Voltage: 1200 V; Case Connection: ISOLATED;
Datasheet	FF300R12KT3PEHOSA1 Datasheet
In Stock	7,417

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	680 ns
No. of Terminals:	7
Terminal Position:	UPPER
Nominal Turn On Time (ton):	215 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Case Connection:	ISOLATED
Other Names:	2156-FF300R12KT3PEHOSA1 SP001361984 INFINFFF300R12KT3PEHOSA1 FF300R12KT3P_E
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.15 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
7,417	-	-

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