Infineon Technologies - FF3MR12KM1P

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FF3MR12KM1P by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF3MR12KM1P
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel; Case Connection: ISOLATED;
Datasheet FF3MR12KM1P Datasheet
In Stock51
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 227 pF
Maximum Pulsed Drain Current (IDM): 750 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 7
Minimum DS Breakdown Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Additional Features: UL RECOGNIZED
Maximum Operating Temperature: 150 Cel
Reference Standard: IEC-61140
Case Connection: ISOLATED
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