Infineon Technologies - FF600R12KE4_E

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FF600R12KE4_E by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF600R12KE4_E
Description N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 2; Maximum VCEsat: 2.2 V; Reference Standard: UL APPROVED;
Datasheet FF600R12KE4_E Datasheet
In Stock116
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.35 V
Surface Mount: NO
Nominal Turn Off Time (toff): 630 ns
No. of Terminals: 7
Terminal Position: UPPER
Nominal Turn On Time (ton): 232 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL APPROVED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.2 V
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