Infineon Technologies - FF600R12KT4

  1. Home
  2. Infineon Technologies - FF600R12KT4
FF600R12KT4 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FF600R12KT4
Description N-Channel; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON; Nominal Turn On Time (ton): .228 ns; Maximum Operating Temperature: 125 Cel;
Datasheet FF600R12KT4 Datasheet
In Stock416
NAME DESCRIPTION
Nominal Turn Off Time (toff): .47 ns
Maximum Collector Current (IC): 600 A
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): .228 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.35 V
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
416 - -

Popular Products

Category Top Products

ISL9V2040D3ST by Onsemi

ISL9V2040D3ST

Onsemi

ISL9V2040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 390V and can handle a max collector current of 10A. This IGBT comes in a small outline package style with gull wing terminals for surface mount assembly.
FF900R12IP4VBOSA1 by Infineon Technologies

FF900R12IP4VBOSA1

Infineon Technologies

FF900R12IP4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 1300ns and a nominal turn-on time of 370ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and inverters.
IXBK55N300 by Littelfuse

IXBK55N300

Littelfuse

IXBK55N300 by Littelfuse is an N-CHANNEL IGBT with 3.2V VCEsat, 130A IC, and 625W power dissipation. Ideal for POWER CONTROL applications, it features a 3000V VCE max and -55 to 150°C operating temp range in a RECTANGULAR package with THROUGH-HOLE terminals.
IRG4PC40UDPBF by Infineon Technologies

IRG4PC40UDPBF

Infineon Technologies

IRG4PC40UDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a nominal turn-off time of 330ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with a max power dissipation of 160W, suitable for high-power electronic systems.
HGTG18N120BND by Harris Semiconductor

HGTG18N120BND

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
SKM195GB066D by Semikron International

SKM195GB066D

Semikron International

SKM195GB066D by Semikron International is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle a Max Collector Current of 265A. Ideal for POWER CONTROL applications, it operates at up to 175°C and features a Nominal Turn Off Time of 569ns.
FS200R07N3E4RBOSA1 by Infineon Technologies

FS200R07N3E4RBOSA1

Infineon Technologies

FS200R07N3E4RBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, 650V max collector-emitter voltage, and 210ns turn on time. It is used for power control applications due to its complex configuration and flange mount package style.
IKD04N60RFBTMA1 by Infineon Technologies

IKD04N60RFBTMA1

Infineon Technologies

IKD04N60RFBTMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 216ns turn-off time. Ideal for power control applications due to its 75W max power dissipation, small outline package style, and built-in diode configuration.
IRG7PH50K10D-EPBF by Infineon Technologies

IRG7PH50K10D-EPBF

Infineon Technologies

IRG7PH50K10D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with tr of 80ns, tf of 110ns, and Pdiss of 400W. It operates at a max Vce of 1200V and max IC of 90A, suitable for high-power applications in industrial electronics and motor control systems.
APTGT750U60D4G by Microsemi

APTGT750U60D4G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 1000 A; Terminal Form: UNSPECIFIED;
2MBI100VA-060-50 by Fujitsu

2MBI100VA-060-50

Fujitsu

Fujitsu 2MBI100VA-060-50 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, current of 100A, and turn-off time of 600ns. Ideal for MOTOR CONTROL applications due to its configuration and performance specs.
APTGT75A60T1G by Microchip Technology

APTGT75A60T1G

Microchip Technology

APTGT75A60T1G by Microchip Technology is an N-CHANNEL IGBT transistor with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and is ideal for MOTOR CONTROL applications. With a Max Collector Current of 100A and Max Power Dissipation of 250W, it offers efficient performance in RECTANGULAR package style.
FP25R12W2T4BOMA1 by Infineon Technologies

FP25R12W2T4BOMA1

Infineon Technologies

FP25R12W2T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 39A. Ideal for power control applications, it has a turn off time of 685ns and turn on time of 133ns. The package style is flange mount with a rectangular shape and isolated case connection.
IHW30N120R5XKSA1 by Infineon Technologies

IHW30N120R5XKSA1

Infineon Technologies

IHW30N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 520ns and a max power dissipation of 330W.
STGP6NC60HD by STMicroelectronics

STGP6NC60HD

STMicroelectronics

STGP6NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 222ns. Package style is flange mount with through-hole terminals.
APT45GP120J by Microsemi

APT45GP120J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED;
HGTG11N120CND by Intersil

HGTG11N120CND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
APT45GP120J by Advanced Power Technology

APT45GP120J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
IKP40N65F5XKSA1 by Infineon Technologies

IKP40N65F5XKSA1

Infineon Technologies

IKP40N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for power control applications due to its fast turn-off time (toff) of 200ns and high collector-emitter voltage rating of 650V. Package style is flange mount with through-hole terminals.
FGA30T65SHD by Onsemi

FGA30T65SHD

Onsemi

FGA30T65SHD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 60A, ideal for power control applications. It has a turn-off time of 67.2ns, operating temperature range from -55 to 175 °C, and a collector-emitter voltage of 650V. The package style is flange mount with matte tin terminal finish in a rectangular shape.