Infineon Technologies - FF600R12KT4

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FF600R12KT4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF600R12KT4
Description N-Channel; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON; Nominal Turn On Time (ton): .228 ns; Maximum Operating Temperature: 125 Cel;
Datasheet FF600R12KT4 Datasheet
In Stock416
NAME DESCRIPTION
Nominal Turn Off Time (toff): .47 ns
Maximum Collector Current (IC): 600 A
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): .228 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.35 V
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
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