FF600R17KF6CB2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FF600R17KF6CB2
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 975 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	FF600R17KF6CB2 Datasheet
In Stock	891

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	975 A
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn)
Nominal Turn Off Time (toff):	1220 ns
No. of Terminals:	10
Maximum Power Dissipation (Abs):	4800 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	470 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X10
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1700 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	3.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
891	$597.010	$531,935.910

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