Infineon Technologies - FF6MR12KM1BOSA1

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FF6MR12KM1BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF6MR12KM1BOSA1
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Minimum DS Breakdown Voltage: 1200 V; Transistor Application: SWITCHING;
Datasheet FF6MR12KM1BOSA1 Datasheet
In Stock28
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 102.8 ns
Maximum Drain Current (ID): 250 A
Maximum Pulsed Drain Current (IDM): 500 A
Surface Mount: NO
No. of Terminals: 7
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 167.9 ns
JESD-30 Code: R-XUFM-X7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .00581 ohm
Other Names: SP001686408
2156-FF6MR12KM1BOSA1
448-FF6MR12KM1BOSA1
Maximum Feedback Capacitance (Crss): 112 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 1200 V
Reference Standard: UL RECOGNIZED
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