Infineon Technologies - FF900R12IE4T

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FF900R12IE4T by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FF900R12IE4T
Description N-Channel; Maximum Power Dissipation (Abs): 5100 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn On Time (ton): 350 ns; Case Connection: ISOLATED;
Datasheet FF900R12IE4T Datasheet
In Stock73
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -50 Cel
Nominal Turn Off Time (toff): 940 ns
Maximum Power Dissipation (Abs): 5100 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 350 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.05 V
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