Infineon Technologies - FP35R12W2T7_B11

FP35R12W2T7_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FP35R12W2T7_B11
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; No. of Terminals: 23; Transistor Element Material: SILICON;
Datasheet FP35R12W2T7_B11 Datasheet
In Stock131
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 35 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.45 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 400 ns
No. of Terminals: 23
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 72 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X23
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: IEC-61140
Case Connection: ISOLATED
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Pricing (USD)

Qty. Unit Price Ext. Price
131 $41.160 $5,391.960

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