Infineon Technologies - FS100R12KE3B3NOSA1

  1. Home
  2. Infineon Technologies - FS100R12KE3B3NOSA1
FS100R12KE3B3NOSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FS100R12KE3B3NOSA1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 140 A; Nominal Turn On Time (ton): 340 ns; JESD-30 Code: R-XUFM-X34;
Datasheet FS100R12KE3B3NOSA1 Datasheet
In Stock966
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 140 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 610 ns
No. of Terminals: 34
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 340 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X34
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
966 - -

Popular Products

Category Top Products

IRG4BC30FD1PBF by International Rectifier

IRG4BC30FD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
FGH30S130P by Onsemi

FGH30S130P

Onsemi

FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.
HGTD1N120BNS9A by Intersil

HGTD1N120BNS9A

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Transistor Element Material: SILICON;
IRG4PC50WPBF by International Rectifier

IRG4PC50WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;
APT60GA60JD60 by Microsemi

APT60GA60JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 112 A; Package Shape: RECTANGULAR; Nominal Turn On Time (ton): 82 ns;
STGY50NC60WD by STMicroelectronics

STGY50NC60WD

STMicroelectronics

STGY50NC60WD by STMicroelectronics is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It is used for power control applications, with a nominal turn off time of 271ns and a max power dissipation of 260W.
TDB6HK180N16RRBOSA1 by Infineon Technologies

TDB6HK180N16RRBOSA1

Infineon Technologies

TDB6HK180N16RRBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 140A IC, and 515W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 410ns and high operating temperature range from -40°C to 150°C.
IGU04N60TAKMA1 by Infineon Technologies

IGU04N60TAKMA1

Infineon Technologies

IGU04N60TAKMA1 by Infineon is an N-CHANNEL IGBT with a 600V max collector-emitter voltage and 9.5A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 268ns and turn-on time of 24ns, it operates in temperatures as low as -40°C.
SKM200GB176D by Semikron International

SKM200GB176D

Semikron International

SKM200GB176D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. It features a Max VCEsat of 2.45V, Max Collector-Emitter Voltage of 1700V, and Max Collector Current of 260A. With a Nominal Turn Off Time of 900ns and Nominal Turn On Time of 405ns, it operates at temperatures up to 150°C.
CPV364M4FPBF by International Rectifier

CPV364M4FPBF

International Rectifier

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Nominal Turn Off Time (toff): 410 ns; Qualification: Not Qualified;
STGWA40M120DF3 by STMicroelectronics

STGWA40M120DF3

STMicroelectronics

STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.
MMIX4G20N250 by Littelfuse

MMIX4G20N250

Littelfuse

MMIX4G20N250 by Littelfuse is an N-CHANNEL IGBT with 4 elements, VCEsat of 3.1V, and IC of 23A. Ideal for general purpose switching applications, it has a max VCE of 2500V and can handle up to 100W power dissipation. This surface-mount transistor operates at temperatures up to 150°C with fast turn-on (ton) and turn-off (toff) times.
APT200GN60J by Microchip Technology

APT200GN60J

Microchip Technology

APT200GN60J by Microchip Technology is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 250A max collector current. It has a power dissipation of 682W, turn-off time of 1210ns, and turn-on time of 75ns. Ideal for power control applications requiring high voltage and current handling capabilities.
IKW75N60H3FKSA1 by Infineon Technologies

IKW75N60H3FKSA1

Infineon Technologies

IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.
FT150R12KE3GB4BDLA1 by Infineon Technologies

FT150R12KE3GB4BDLA1

Infineon Technologies

Infineon Technologies' FT150R12KE3GB4BDLA1 is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 200A. It is commonly used for power control applications due to its common collector configuration and built-in diode and resistor.
IRGR2B60KDPBF by International Rectifier

IRGR2B60KDPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
HGT1S10N120BNST by Fairchild Semiconductor

HGT1S10N120BNST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-609 Code: e3;
IRG4PH20KPBF by Infineon Technologies

IRG4PH20KPBF

Infineon Technologies

IRG4PH20KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 24W. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 720ns and Max Fall Time of 400ns. Ideal for high-power systems requiring efficient switching capabilities.
HGTG40N60B3 by Fairchild Semiconductor

HGTG40N60B3

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Transistor Application: POWER CONTROL;
IXDH30N120D1 by IXYS Corporation

IXDH30N120D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 435 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;