
Image shown is a representation only.
Manufacturer | Infineon Technologies |
---|---|
Manufacturer's Part Number | FS100R12KT4BOSA1 |
Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; |
Datasheet | FS100R12KT4BOSA1 Datasheet |
In Stock | 448 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 490 ns |
No. of Terminals: | 25 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 1200 V |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 185 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X25 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Peak Reflow Temperature (C): | NOT SPECIFIED |