FS200R07A1E3BOMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS200R07A1E3BOMA1
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Transistor Element Material: SILICON; Transistor Application: POWER CONTROL;
Datasheet	FS200R07A1E3BOMA1 Datasheet
In Stock	360

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	250 A
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	490 ns
No. of Terminals:	13
Maximum Collector-Emitter Voltage:	650 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	120 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X13
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
360	-	-

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