FS225R17KE4 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS225R17KE4
Description	N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 340 A; Package Body Material: UNSPECIFIED;
Datasheet	FS225R17KE4 Datasheet
In Stock	739

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	340 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	1500 ns
No. of Terminals:	29
Maximum Power Dissipation (Abs):	1500 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	350 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X29
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1700 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
739	-	-

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);

RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;