Infineon Technologies - FS300R17OE4_B81

  1. Home
  2. Infineon Technologies - FS300R17OE4_B81
FS300R17OE4_B81 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number FS300R17OE4_B81
Description N-Channel; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1700 V; Nominal Turn On Time (ton): 385 ns; Case Connection: ISOLATED; Maximum VCEsat: 2.3 V;
Datasheet FS300R17OE4_B81 Datasheet
In Stock773
NAME DESCRIPTION
Nominal Turn Off Time (toff): 910 ns
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 385 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.3 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
773 - -

Popular Products

Category Top Products

SKB02N120ATMA1 by Infineon Technologies

SKB02N120ATMA1

Infineon Technologies

Infineon's SKB02N120ATMA1 is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage and 6.2A max collector current. It has a built-in diode, 375ns turn-off time, and is ideal for power control applications requiring fast switching capabilities in surface-mount designs.
IXLF19N250A by Littelfuse

IXLF19N250A

Littelfuse

IXLF19N250A by Littelfuse is an N-CHANNEL IGBT with 2500V VCE, 19A IC, and 150W Ptot. Ideal for power control applications, it has a turn-off time of 850ns and operates up to 150°C. Recognized by UL, this transistor is in a rectangular package with through-hole terminals.
IRG4IBC20KDPBF by International Rectifier

IRG4IBC20KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Maximum Collector Current (IC): 11.5 A; Maximum Operating Temperature: 150 Cel;
2MBI300U2B-060-50 by Fuji Electric

2MBI300U2B-060-50

Fuji Electric

Fuji Electric's 2MBI300U2B-060-50 IGBT features N-CHANNEL polarity, SERIES CONNECTED configuration with 2 elements & built-in diode. Ideal for POWER CONTROL applications with max VCEsat of 2.45V and IC of 300A. Operates at up to 150°C, offering fast turn-off time (toff) of 480ns and turn-on time (ton) of 400ns.
IGD06N60TATMA1 by Infineon Technologies

IGD06N60TATMA1

Infineon Technologies

Infineon's IGD06N60TATMA1 is an N-CHANNEL IGBT with 600V VCE, 6A IC, and 17ns ton. It is a surface-mount device in a plastic package suitable for high-speed switching applications.
SGS10N60RUFDTU by Fairchild Semiconductor

SGS10N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 284 ns;
FGH40N60UFTU by Onsemi

FGH40N60UFTU

Onsemi

FGH40N60UFTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max collector current of 80A. It has a power dissipation of 290W, making it suitable for power control applications. With a turn-off time of 190ns and turn-on time of 110ns, it offers efficient switching performance in various industrial settings.
IKW50N65ES5XKSA1 by Infineon Technologies

IKW50N65ES5XKSA1

Infineon Technologies

Infineon IKW50N65ES5XKSA1 is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and Pmax of 274W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 198ns and high operating temperature range (-40 to 175°C). Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Terminals: THROUGH-HOLE.
FGH30S130P by Onsemi

FGH30S130P

Onsemi

FGH30S130P by Onsemi is an N-CHANNEL IGBT with 1300V VCE, 60A IC, and 500W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 175°C. With a fast tf of 210ns and toff of 905ns, this IGBT offers efficient switching performance in a rectangular package with through-hole terminals.
IXDN75N120 by IXYS Corporation

IXDN75N120

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 660 W; Maximum Collector Current (IC): 150 A; Transistor Application: MOTOR CONTROL;
FP100R06KE3BOSA1 by Infineon Technologies

FP100R06KE3BOSA1

Infineon Technologies

FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
IRG4BC30SPBF by International Rectifier

IRG4BC30SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; No. of Elements: 1;
IKW75N60T by Infineon Technologies

IKW75N60T

Infineon Technologies

IKW75N60T by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a power dissipation of 428W and turn-off time of 401ns, making it ideal for power control applications requiring high efficiency and fast switching capabilities.
IXXH100N60B3 by Littelfuse

IXXH100N60B3

Littelfuse

IXXH100N60B3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 220A IC, and 830W power dissipation. Ideal for POWER CONTROL applications, it features a single configuration in a rectangular package with through-hole terminals.
F4150R12KS4BOSA1 by Infineon Technologies

F4150R12KS4BOSA1

Infineon Technologies

F4150R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and can handle a collector current of 180A, making it ideal for power control applications. With a turn-off time of 390ns and turn-on time of 190ns, this UL RECOGNIZED transistor is designed for high-power operations.
IRG4BC30KPBF by International Rectifier

IRG4BC30KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 28 A; Case Connection: COLLECTOR;
FGL60N100BNTD by Onsemi

FGL60N100BNTD

Onsemi

FGL60N100BNTD by Onsemi is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 460ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
GT20J321 by Toshiba

GT20J321

Toshiba

Toshiba GT20J321 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, ideal for power control applications. It features a built-in diode, 20A max collector current (IC), and 45W max power dissipation. With a turn-off time of 340ns and turn-on time of 170ns, it offers efficient performance in high-power systems.
IRG4PC40UD-E by Infineon Technologies

IRG4PC40UD-E

Infineon Technologies

IRG4PC40UD-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 330ns and turn-on time of 92ns, this transistor is designed for flange mount installation.
IXXH30N60B3D1 by Littelfuse

IXXH30N60B3D1

Littelfuse

IXXH30N60B3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 1.85V VCEsat. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, RECTANGULAR shape, and 292ns turn-off time.