FS600R07A2E3B31BOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS600R07A2E3B31BOSA1
Description	N-Channel; Maximum Power Dissipation (Abs): 1300 W; Maximum Collector Current (IC): 530 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 1.5 V; Maximum Collector-Emitter Voltage: 650 V;
Datasheet	FS600R07A2E3B31BOSA1 Datasheet
In Stock	915

NAME	DESCRIPTION
Maximum Collector Current (IC):	530 A
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-Channel
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	540 ns
Maximum Power Dissipation (Abs):	1300 W
Maximum Collector-Emitter Voltage:	650 V
Nominal Turn On Time (ton):	190 ns
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Maximum VCEsat:	1.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
915	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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