Siemens - BSM150GB120DN2

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BSM150GB120DN2 by Siemens

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Manufacturer Siemens
Manufacturer's Part Number BSM150GB120DN2
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 210 A; Nominal Turn Off Time (toff): 600 ns; No. of Elements: 2;
Datasheet BSM150GB120DN2 Datasheet
In Stock725
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): 210 A
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 200 ns
Maximum Turn On Time (ton): 400 ns
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Nominal Turn Off Time (toff): 600 ns
No. of Terminals: 7
Terminal Position: UPPER
Nominal Turn On Time (ton): 200 ns
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 800 ns
JESD-30 Code: R-CUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 2500 W
Maximum Fall Time (tf): 100 ns
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 3 V
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